Coverart for item
The Resource Handbook of GaN semiconductor materials and devices, Wengang (Wayne) Bi, Hao-chung (Henry) Kuo, Pei-Cheng Ku, Bo Shen, editors

Handbook of GaN semiconductor materials and devices, Wengang (Wayne) Bi, Hao-chung (Henry) Kuo, Pei-Cheng Ku, Bo Shen, editors

Label
Handbook of GaN semiconductor materials and devices
Title
Handbook of GaN semiconductor materials and devices
Statement of responsibility
Wengang (Wayne) Bi, Hao-chung (Henry) Kuo, Pei-Cheng Ku, Bo Shen, editors
Contributor
Subject
Genre
Language
eng
Summary
"This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.Bo Shen is the Cheung Kong Professor at Peking University in China. "--Provided by publisher
Dewey number
621.3815/2
Index
no index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
  • handbooks
http://library.link/vocab/relatedWorkOrContributorName
Bi, Wengang,
Series statement
Series in optics and optoelectronics
http://library.link/vocab/subjectName
  • Semiconductors
  • Gallium nitride
Label
Handbook of GaN semiconductor materials and devices, Wengang (Wayne) Bi, Hao-chung (Henry) Kuo, Pei-Cheng Ku, Bo Shen, editors
Instantiates
Publication
Contents
  • ""Cover""; ""Half Title ""; ""Title Page ""; ""Copyright Page ""; ""Table of Contents ""; ""Series Preface ""; ""Foreword ""; ""Preface ""; ""Editors ""; ""Contributors ""; ""Section I: Fundamentals ""; ""1: III-Nitride Materials and Characterization ""
  • ""2: Microstructure and Polarization Properties of III-Nitride Semiconductors """"3: Optical Properties of III-Nitride Semiconductors ""; ""4: Electronic and Transport Properties of III-Nitride Semiconductors ""; ""Section II: Growth and Processing ""
  • ""5: Growth Technology for GaN and AlN Bulk Substrates and Templates """"6: III-Nitride Metalorganic Vapor-Phase Epitaxy ""; ""7: Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications ""; ""8: Advanced Optoelectronic Device Processing ""
  • ""Section III: Power Electronics """"9: Principles and Properties of Nitride-Based Electronic Devices ""; ""10: Power Conversion and the Role of GaN ""; ""11: Recent Progress in GaN-on-Si HEMT ""; ""12: Reliability in III-Nitride Devices ""; ""Section IV: Light Emitters ""
  • ""13: Internal Quantum Efficiency for III-Nitrideâ#x80;#x93;Based Blue Light-Emitting Diodes """"14: White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends ""; ""15: Current Status and Trends for Green Light-Emitting Diodes ""
Control code
on1007565792
Dimensions
unknown
Extent
1 online resource
Form of item
online
Isbn
9781315152011
Note
Taylor & Francis
Specific material designation
remote
System control number
(OCoLC)1007565792
Label
Handbook of GaN semiconductor materials and devices, Wengang (Wayne) Bi, Hao-chung (Henry) Kuo, Pei-Cheng Ku, Bo Shen, editors
Publication
Contents
  • ""Cover""; ""Half Title ""; ""Title Page ""; ""Copyright Page ""; ""Table of Contents ""; ""Series Preface ""; ""Foreword ""; ""Preface ""; ""Editors ""; ""Contributors ""; ""Section I: Fundamentals ""; ""1: III-Nitride Materials and Characterization ""
  • ""2: Microstructure and Polarization Properties of III-Nitride Semiconductors """"3: Optical Properties of III-Nitride Semiconductors ""; ""4: Electronic and Transport Properties of III-Nitride Semiconductors ""; ""Section II: Growth and Processing ""
  • ""5: Growth Technology for GaN and AlN Bulk Substrates and Templates """"6: III-Nitride Metalorganic Vapor-Phase Epitaxy ""; ""7: Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications ""; ""8: Advanced Optoelectronic Device Processing ""
  • ""Section III: Power Electronics """"9: Principles and Properties of Nitride-Based Electronic Devices ""; ""10: Power Conversion and the Role of GaN ""; ""11: Recent Progress in GaN-on-Si HEMT ""; ""12: Reliability in III-Nitride Devices ""; ""Section IV: Light Emitters ""
  • ""13: Internal Quantum Efficiency for III-Nitrideâ#x80;#x93;Based Blue Light-Emitting Diodes """"14: White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends ""; ""15: Current Status and Trends for Green Light-Emitting Diodes ""
Control code
on1007565792
Dimensions
unknown
Extent
1 online resource
Form of item
online
Isbn
9781315152011
Note
Taylor & Francis
Specific material designation
remote
System control number
(OCoLC)1007565792

Library Locations

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